DocumentCode
2476819
Title
Silicon germanium BiCMOS technology
Author
Kempf, P. ; Racanelli, M.
Author_Institution
CTO, Jazz Semicond., Newport Beach, CA, USA
fYear
2002
fDate
20-23 Oct. 2002
Firstpage
3
Lastpage
6
Abstract
In the past few years, the cutoff frequency of silicon germanium bipolar transistors has nearly quadrupled for devices integrated in production BiCMOS process technology. This has enabled integration, speed and power improvements using silicon-based solutions in communications products previously served exclusively by III-V technology.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; high-speed integrated circuits; integrated circuit design; integrated circuit manufacture; semiconductor materials; telecommunication equipment; IC speed/power improvements; III-V technology; RF subsystem design; SiGe; communications products; high speed communication applications; integrated SiGe BiCMOS technology; production BiCMOS process technology; silicon germanium bipolar transistor cutoff frequency; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Gallium arsenide; Germanium silicon alloys; Noise figure; Production; Radio frequency; Silicon germanium; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location
Monterey, California, USA
ISSN
1064-7775
Print_ISBN
0-7803-7447-9
Type
conf
DOI
10.1109/GAAS.2002.1049016
Filename
1049016
Link To Document