Multi-stage G-band (140-220 GHz) InP HBT amplifiers

Author

Urteaga, M. ; Scott, D. ; Krishnan, S. ; Wei, Y. ; Dahlstrom, M. ; Griffith, Z. ; Parthasarathy, N. ; Rodwell, M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

44

Lastpage

47

Abstract

We report three-stage monolithic amplifiers for the 140-220 GHz frequency band. Two designs have been fabricated in an InAlAs/InGaAs transferred-substrate HBT technology. The first design exhibited a small-signal gain of 12.0 dB at 170 GHz, and the second design exhibited a gain of 8.5 dB at 195 GHz.

Keywords

III-V semiconductors; bipolar MIMIC; heterojunction bipolar transistors; indium compounds; integrated circuit design; millimetre wave amplifiers; 12 dB; 140 to 220 GHz; 170 GHz; 195 GHz; 8.5 dB; InAlAs-InGaAs; InAlAs/InGaAs transferred-substrate HBT technology; InP; InP HBT amplifiers; millimeter-wave circuits; multi-stage G-band amplifiers; multi-stage tuned amplifier; three-stage monolithic amplifiers; Epitaxial growth; Fabrication; Frequency; Gain measurement; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Indium phosphide; Polyimides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049026

Filename

1049026