DocumentCode
2477380
Title
An innovative method for determining the junction temperature of a photovoltaic cell
Author
Jeevan Doss, C.R. ; Kumaravel, M. ; George, Boby ; Jagadeesh Kumar, V.
Author_Institution
Central Electron. Centre, IIT Madras, Chennai, India
fYear
2012
fDate
13-16 May 2012
Firstpage
1847
Lastpage
1850
Abstract
An innovative method for determining the junction temperature TJ as a function of the cell voltage V of a photovoltaic (PV) cell for varying operating power levels at pre-determined values of irradiation levels is presented. Since the junction of a PV cell that is in operation is inaccessible for obtaining a measure of TJ, a novel indirect temperature measurement method suitable for determining the TJ is proposed in this paper. The electronically controllable load required to establish different operating power levels for obtaining the TJ - V characteristic of a photovoltaic (PV) cell is implemented with a MOSFET, suitably controlled to act as a variable load resistor. Microcontroller based hardware with associated software were developed to automate the entire measurement process. Results obtained from a prototype TJ - V measurement unit built and tested establish the efficacy of the proposed method.
Keywords
MOSFET; microcontrollers; solar cells; temperature measurement; units (measurement); MOSFET; PV cell; electronically controllable load; indirect temperature measurement method; irradiation levels; measurement unit; microcontroller based hardware; photovoltaic cell; variable load resistor; Junctions; MOSFET circuits; Photovoltaic systems; Temperature; Temperature measurement; Voltage measurement; Junction temperature; MOSFET as Electronic load; Open circuit voltage; Solar photovoltaic cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference (I2MTC), 2012 IEEE International
Conference_Location
Graz
ISSN
1091-5281
Print_ISBN
978-1-4577-1773-4
Type
conf
DOI
10.1109/I2MTC.2012.6229223
Filename
6229223
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