• DocumentCode
    2478028
  • Title

    P2H-4 Small (3x2.5mm²) Surface Acoustic Wave Duplexer for W-CDMA with Good Temperature and Frequency Characteristics

  • Author

    Kadota, Michio ; Nakao, Takeshi ; Nishiyama, Kenji ; Kido, Shunsuke ; Kato, Masanori ; Omote, Ryoichi ; Yonekura, Hiroshi ; Takada, Norihiko ; Kita, Ryoichi

  • Author_Institution
    Murata Manuf. Co., Ltd., Kyoto
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    1677
  • Lastpage
    1680
  • Abstract
    Small sized surface acoustic wave (SAW) duplexer for wide band code division multiple access (W- CDMA) system with a good temperature coefficient of frequency (TCF) and good frequency characteristics has been required. However, the size of conventional SAW duplexer for W-CDMA using Al-electrode/50-70degYX- LiNbO3 is large (3.8x3.8 mm2) and its TCF is not good (-80ppm/degC). So, this duplexer can´t satisfy its severe specifications in the all temperature range from -30 to 85degC. When SiO2 film is deposited on this substrate to improve the TCF, the frequency characteristics is deteriorated by convex portions on the SiO2 surface caused by SiO2 sputtering. This time, by applying a flip chip bonding process, a fiattened-SiO2/Cu- electrode/substrate structure, and a YX-LiNbO3 substrate, a small sized (3x2.5x1.2 mm3) SAW duplexer having good characteristics (such as low insertion loss and large attenuation) and good TCF has been realized for the first time. Here, the SiO2 film is used to improve the TCF, the flattened-SiO2 to obtain high Q, the thick Cu- electrode to obtain the large reflection coefficient, and the YX-LiNbO3 substrate to obtain the large coupling factor and not to generate Rayleigh wave which causes spurious at the SiO2 of 0.3lambda and the Cu-electrode of 0.05lambda.
  • Keywords
    Rayleigh waves; broadband networks; code division multiple access; electrodes; flip-chip devices; silicon compounds; substrates; surface acoustic wave devices; Cu electrode; LiNbO3; Rayleigh wave; SAW duplexer; SiO2; SiO2 film deposition; SiO2 sputtering; W-CDMA; YX-LiNbO3 substrate; electrode/substrate structure; flip chip bonding; small surface acoustic wave duplexer; temperature coefficient of frequency; wide band code division multiple access; Acoustic waves; Electrodes; Flip chip; Frequency conversion; Multiaccess communication; Sputtering; Substrates; Surface acoustic waves; Temperature distribution; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2007. IEEE
  • Conference_Location
    New York, NY
  • ISSN
    1051-0117
  • Print_ISBN
    978-1-4244-1384-3
  • Electronic_ISBN
    1051-0117
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2007.422
  • Filename
    4409995