DocumentCode
2478056
Title
Design of multi-finger AlGaAs/GaAs HBTs with non-uniform spacing
Author
Chang, Yang-Hua ; Lee, Yueh-Cheng ; Liu, Chi-Chung
Author_Institution
Nat. Yunlin Univ. of Sci. & Technol., Tou-Liu, Taiwan
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
78
Lastpage
81
Abstract
A non-uniform spacing structure in multi-finger heterojunction bipolar transistors is presented to improve thermal stability. Device peak temperature is lowered, and a higher current handling capability can be realized. The design procedures to optimize the spacing are described.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; thermal stability; AlGaAs-GaAs; design procedure; device peak temperature; high current handling capability; multi-finger AlGaAs/GaAs HBTs; multi-finger heterojunction bipolar transistors; nonuniform spacing; nonuniform spacing structure; spacing optimization; thermal stability; Design optimization; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Medical simulation; Resistors; Temperature distribution; Thermal conductivity; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740192
Filename
740192
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