DocumentCode
2478222
Title
Modeling for the subthreshold current in SOI short channel gate controlled hybrid transistor
Author
Huang, Ru ; Wang, Yangyuan ; Han, Ruqi
Author_Institution
Inst. of Microelectron., Beijing Univ., China
fYear
1998
fDate
29-29 Aug. 1998
Firstpage
118
Lastpage
121
Abstract
A subthreshold current model for the SOI short channel gate controlled hybrid transistor (GCHT) is presented in this paper for the first time, considering the mobile charge affected by the gate voltage and the base voltage simultaneously. The influence of the channel length and the drain voltage on the performance of GCHT is investigated. The model predictions agree well with numerical results and experimental data.
Keywords
semiconductor device models; silicon-on-insulator; transistors; SOI short channel gate controlled hybrid transistor; model; subthreshold current; Charge carrier processes; Gaussian processes; MOSFET circuits; Microelectronics; Nonuniform electric fields; Poisson equations; Predictive models; Subthreshold current; Surface treatment; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-4932-6
Type
conf
DOI
10.1109/HKEDM.1998.740201
Filename
740201
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