Full-wave optimization of nitride-based resonant-tunneling diodes for terahertz amplification

Resonant tunneling diode (RTD) structures have the potential to counteract plasmonic losses and thus enhance the gain performance of terahertz (THz) devices. Of particular interest are nitride-based devices, as their high breakdown voltages and capability of large voltage swing gives distinct advantages over Si-based technologies. In this paper, several resonant tunneling diode (RTD) configurations are modeled using FDTD techniques coupled with charge transport equations for completeness. The gain amplifications when integrated with a GaN HEMT are validated using reference measured data. Initial results show resonances up to 2.25 THz and gain improvements up to ~6 dB.