Semiconductor photonic integrated circuits with directly formed waveguides using in-plane bandgap energy control by selective MOVPE

Photonic integrated circuits (PICs), which are attractive for advanced optical-fiber communication systems, consist of various photonic components containing waveguide structures with different bandgap energy (Eg). To fabricate PICs, complicated processes including selective etching of multi-layers and the following growth of various layers have been required. The selective metalorganic vapor phase epitaxy (MOVPE) technique enables directly formed MQW waveguides with in-plane Eg control. Simple fabrication processes without semiconductor etching are desirable for high device uniformity and yield. Using this novel technique, various photonic devices have been successfully demonstrated