MOVPE technology

Author

Jürgensen, H.

Author_Institution

AIXTRON Semiconductor Technols. GmbH, Aachen, Germany

fYear

1993

fDate

15-18 Nov 1993

Firstpage

12

Lastpage

13

Abstract

Layered semiconductor devices consisting of III-V or II-VI materials instead of Si are gaining more and more importance in the field of modern electronics. For example, telecommunication supported by optoelectronic devices is presently one of the most important and rapidly evolving field of advanced high-technology, device applications for III-V based compounds are for instance HEMTs, LEDs, lasers, OEICs, MMICs, HBTs, satellite-bound solar cells with high efficiency etc.; device applications for II-VI materials lie in the field of visible light detectors, infrared detectors, tuneable lasers, LEDs, etc

Keywords

HEMT integrated circuits; II-VI semiconductors; III-V semiconductors; MMIC; bipolar integrated circuits; integrated optoelectronics; laser tuning; light emitting diodes; optoelectronic devices; photodetectors; semiconductor growth; semiconductor lasers; solar cells; vapour phase epitaxial growth; HBTs; HEMTs; II-VI materials; III-V based compounds; III-V materials; LEDs; MMICs; MOVPE technology; OEICs; device applications; high efficiency; high-technology; infrared detectors; lasers; layered semiconductor devices; modern electronics; optoelectronic devices; satellite-bound solar cells; telecommunication; tuneable lasers; visible light detectors; Epitaxial growth; Epitaxial layers; II-VI semiconductor materials; III-V semiconductor materials; Infrared detectors; Laser tuning; Light emitting diodes; Optical materials; Optoelectronic devices; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379151

Filename

379151