DocumentCode
2480412
Title
P4L-4 Etch Rate Dependence on Crystal Orientation for Lithium Niobate
Author
Randles, Andrew B. ; Tanaka, Shuji ; Esashi, Masayoshi
Author_Institution
Tohoku Univ., Sendai
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
2119
Lastpage
2122
Abstract
This paper presents experimental data for the etch rate of lithium niobate (LiNbO3) as a function of crystal orientation. The etching characterization is a fundamental technology needed for the fabrication of new sensors, actuators or other new devices. In this study, 30 mm spheres of LiNbO3 were etched in hydrofluoric acid and in a solution of hydrofluoric and nitric acids, to determine the etch rate dependence on crystal orientation. It was found that the maximum etch rate was on the -Z face and the etching showed a three-fold symmetry about the Z axis. The Wulff-Jaccodine method as well as the data collected from the etched spheres were used to predict the etched shape of a wafer. The predicted shape agreed with that found during etching.
Keywords
crystal orientation; etching; hydrogen compounds; lithium compounds; surface acoustic wave devices; LiNbO3; Wulff-Jaccodine method; Z axis; actuator fabrication; crystal orientation; etch rate dependence; hydrofluoric acid; lithium niobate; nitric acid; sensor fabrication; three-fold symmetry; wafer; Ferroelectric materials; Lithium niobate; Micromachining; Micromechanical devices; Optical surface waves; Shape; Sputter etching; Surface acoustic waves; Temperature; Wheels;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2007. IEEE
Conference_Location
New York, NY
ISSN
1051-0117
Print_ISBN
978-1-4244-1384-3
Electronic_ISBN
1051-0117
Type
conf
DOI
10.1109/ULTSYM.2007.533
Filename
4410106
Link To Document