Transport coefficients of Ge in magnetic fields

Author

Ikeda, K. ; Nakamura, H. ; Yanenaga, I. ; Yamaguchi, S.

Author_Institution

Graduate Univ. for Adv. Studies, Gifu, Japan

fYear

1998

fDate

24-28 May 1998

Firstpage

277

Lastpage

279

Abstract

We measured the transport coefficients of InSb, Si and Ge in the magnetic field range of 0 to 4 Tesla near a room temperature. Transport coefficients obtained by measurements were electrical conductivity σ, Hall coefficient R_h, thermoelectric power α and Nernst coefficient N. These experimental results have been verifying by the theoretical calculations based on the band model. We report the experimental results compared with theoretical values in the case of Ge. Theoretical values had qualitative agreements with experimental results

Keywords

Hall effect; III-V semiconductors; electrical conductivity; elemental semiconductors; germanium; indium compounds; silicon; thermoelectric power; thermomagnetic effects; 4 T; Ge; Hall coefficient; InSb; Nernst coefficient; Si; band model; electrical conductivity; thermoelectric power; transport coefficients; Electric variables measurement; Magnetic field measurement; Magnetic fields; Magnetic materials; Nuclear power generation; Plasma temperature; Power measurement; Shape measurement; Temperature distribution; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on

Conference_Location

Nagoya

ISSN

1094-2734

Print_ISBN

0-7803-4907-5

Type

conf

DOI

10.1109/ICT.1998.740372

Filename

740372