P5I-1 Multiple States Switching Operation of AlGaN /GaN Layer Mode Device

In this paper, we have experimentally studied DC bias depending frequency characteristics of SAW and layer mode and their higher frequency mode, on the hetero epitaxially grown AlGaN/GaN film on Sapphire substrate which is used for HEMT IC. By applying DC bias signal surface and layer waves are generated by depleting 2DEG, which is shortening the surface area of the substrate. In this operation, the size of 2DEG distributed near at finger electrodes are modulated by the DC bias and provides the variable size electrodes, which causes the efficient generation of space harmonics. It also provides variable filter including selective switching of frequency pass band.