• DocumentCode
    2481702
  • Title

    Doping of FeSi2 by intermixed additives sintering

  • Author

    Schackenberg, K. ; Arenz, F. ; Müller, E. ; Ernst, H. ; Schilz, J. ; Kaysser, W.A.

  • Author_Institution
    Inst. of Mater. Res., German Aerosp. Center, Koln, Germany
  • fYear
    1998
  • fDate
    24-28 May 1998
  • Firstpage
    382
  • Lastpage
    385
  • Abstract
    A simple powder metallurgical instrumentality for the preparation of doped FeSi2 bulk material from undoped FeSi2 and elemental dopants has been developed and tested. The processing parameters have been optimised with respect to an advantageous thermoelectric performance. The thermoelectric transport properties (Seebeck coefficient, electrical conductivity, thermal conductivity, charge carrier density and mobility) have been determined for p-type FeSi2:Al and FeSi2:Al+Mn, respectively. The results have been compared to uniaxial hot pressed material from gas atomised pre-alloyed FeSi2:Al
  • Keywords
    Seebeck effect; aluminium; carrier density; carrier mobility; iron compounds; manganese; powder technology; semiconductor doping; semiconductor materials; sintering; thermal conductivity; FeSi2:Al; FeSi2:Al,Mn; Seebeck coefficient; carrier density; carrier mobility; electrical conductivity; intermixed additives sintering; powder metallurgy; thermal conductivity; thermoelectric performance; Additives; Business process re-engineering; Composite materials; Doping; Grain size; Iron; Microstructure; Milling; Powders; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
  • Conference_Location
    Nagoya
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4907-5
  • Type

    conf

  • DOI
    10.1109/ICT.1998.740399
  • Filename
    740399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2481702