DocumentCode
2482371
Title
High power, diffraction limited laser diodes
Author
Welch, David F. ; Parke, Ross ; Brien, Steve O. ; Dzurko, Ken ; Mehuys, Dave ; Lang, Robert ; Osinski, Jules
Author_Institution
Spectra Diode Labs., San Jose, CA, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
534
Lastpage
535
Abstract
High power semiconductor laser diodes have many applications including satellite communications, printing, frequency doubling, and spectroscopy. Recent advances in the development of monolithically integrated master oscillator power amplifier configurations have resulted in the demonstration of single mode operation to output power in excess of 3 W CW. As a result the application of diode lasers to a greater variety of systems has begun and new applications are being raised which take advantage of the small size, efficient operation, and potential low cost. In this paper the characteristics of the M-MOPA architecture will be discussed
Keywords
integrated optics; laser modes; power amplifiers; semiconductor lasers; 3 W; CW output power; M-MOPA; diffraction limited laser diodes; high power semiconductor laser diodes; monolithically integrated master oscillator power amplifier; single mode operation; Diffraction; Diode lasers; Frequency; Operational amplifiers; Oscillators; Power amplifiers; Power generation; Printing; Satellite communication; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379298
Filename
379298
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