Parameter extraction in semiconductor lasers using nearly degenerate four-wave mixing measurements

Author

Jiang, Shijun ; Dagenais, Mario

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

578

Lastpage

579

Abstract

Nearly degenerate four-wave mixing (NDFWM) in semiconductor lasers has been studied extensively. As we will demonstrate, the frequency dependence of FWM signals can be used to extract the intrinsic AlGaAs-GaAs semiconductor laser parameters since the FWM process is free of electrical parasitic effects. Through a quantitative fit to the NDFWM data, we were able to extract some basic semiconductor laser parameters, including the relaxation oscillation frequency, damping rate, nonlinear gain parameter, linewidth enhancement factor and optical confinement factor

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser variables measurement; multiwave mixing; optical pumping; semiconductor lasers; spectral line breadth; AlGaAs-GaAs; AlGaAs-GaAs semiconductor laser parameters; damping rate; electrical parasitic effects; frequency dependence; linewidth enhancement factor; nearly degenerate four-wave mixing measurements; nonlinear gain parameter; optical confinement factor; parameter extraction; relaxation oscillation frequency; Data mining; Electrons; Four-wave mixing; Frequency; Laser modes; Laser theory; Parameter extraction; Probes; Pump lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379320

Filename

379320