DocumentCode
2482900
Title
P6H-9 Discerning the Quality of ZnO Films from Their Etch Properties
Author
Hickernell, Thomas S. ; Hickernell, Fred S.
Author_Institution
Tempe Preparatory Acad., Tempe
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
2602
Lastpage
2605
Abstract
Several tests have been used over the years to determine the quality of thin film zinc oxide. These tests have included coupling factor measurement, acoustic and optical loss, surface roughness, and grain size. One such test, which is especially useful when establishing the best ZnO deposition condition, is chemical etching. Chemical etching reveals considerable information about the density of the fiber grain structure, the film orientation, film strain, and can be related to coupling factor. Etching ZnO films or crystals is highly anisotropic depending upon whether the acid attacks its zinc face, its oxygen face, or laterally to its c-axis orientation. By controlling the percentage of the acid etchant in water, direct comparisons can be made of the film properties under different deposition conditions. Etch times extend as low as 100 Angstroms per second for ZnO films with dense uniform fiber grains and as high as 1000 Angstroms per second for nonuniform grain structures. This paper will present the results of etching studies on micrometer thick ZnO under a triode system of deposition which can produce very high quality films. Taking into account the etch rates and the etch pit density. Both can be used to predict the quality of the ZnO films for applications.
Keywords
etching; semiconductor thin films; zinc compounds; ZnO; ZnO films; acoustic loss; c-axis orientation; chemical etching; coupling factor measurement; etch properties; fiber grain structure; film orientation; film strain; grain size; optical loss; surface roughness; thin film zinc oxide; triode system; Acoustic measurements; Acoustic testing; Chemicals; Etching; Grain size; Loss measurement; Optical coupling; Optical films; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2007. IEEE
Conference_Location
New York, NY
ISSN
1051-0117
Print_ISBN
978-1-4244-1384-3
Electronic_ISBN
1051-0117
Type
conf
DOI
10.1109/ULTSYM.2007.655
Filename
4410228
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