• DocumentCode
    2482900
  • Title

    P6H-9 Discerning the Quality of ZnO Films from Their Etch Properties

  • Author

    Hickernell, Thomas S. ; Hickernell, Fred S.

  • Author_Institution
    Tempe Preparatory Acad., Tempe
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    2602
  • Lastpage
    2605
  • Abstract
    Several tests have been used over the years to determine the quality of thin film zinc oxide. These tests have included coupling factor measurement, acoustic and optical loss, surface roughness, and grain size. One such test, which is especially useful when establishing the best ZnO deposition condition, is chemical etching. Chemical etching reveals considerable information about the density of the fiber grain structure, the film orientation, film strain, and can be related to coupling factor. Etching ZnO films or crystals is highly anisotropic depending upon whether the acid attacks its zinc face, its oxygen face, or laterally to its c-axis orientation. By controlling the percentage of the acid etchant in water, direct comparisons can be made of the film properties under different deposition conditions. Etch times extend as low as 100 Angstroms per second for ZnO films with dense uniform fiber grains and as high as 1000 Angstroms per second for nonuniform grain structures. This paper will present the results of etching studies on micrometer thick ZnO under a triode system of deposition which can produce very high quality films. Taking into account the etch rates and the etch pit density. Both can be used to predict the quality of the ZnO films for applications.
  • Keywords
    etching; semiconductor thin films; zinc compounds; ZnO; ZnO films; acoustic loss; c-axis orientation; chemical etching; coupling factor measurement; etch properties; fiber grain structure; film orientation; film strain; grain size; optical loss; surface roughness; thin film zinc oxide; triode system; Acoustic measurements; Acoustic testing; Chemicals; Etching; Grain size; Loss measurement; Optical coupling; Optical films; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2007. IEEE
  • Conference_Location
    New York, NY
  • ISSN
    1051-0117
  • Print_ISBN
    978-1-4244-1384-3
  • Electronic_ISBN
    1051-0117
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2007.655
  • Filename
    4410228