DocumentCode
2483219
Title
SCH-SQW InGaAsP/InGaP semiconductor laser for the optical pumping of solid state laser
Author
Yoo, J.S. ; Choi, Byoung S.
Author_Institution
Mater. & Devices Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
fYear
1993
fDate
15-18 Nov 1993
Firstpage
615
Lastpage
616
Abstract
SCH-SQW InGaAsP/InGaP lasers emitting at 809 nm were made by liquid phase epitaxy technique. The lasers are very economical and simple to operate, and reliably pump a Nd:YAG green laser. The resultant output power at λ=532 nm was near 30 mW in a stable and single lobe
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser stability; liquid phase epitaxial growth; optical fabrication; optical pumping; quantum well lasers; semiconductor growth; 30 mW; 532 nm; 809 nm; InGaAsP-InGaP; Nd:YAG green laser; SCH-SQW InGaAsP/InGaP semiconductor laser; YAG:Nd; YAl5O12:Nd; economical; laser stablity; liquid phase epitaxy technique; optical pumping; reliably pumped; resultant output power; single lobe; solid state laser; Diode lasers; Laser excitation; Mirrors; Optical materials; Optical pumping; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Solid lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379339
Filename
379339
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