DocumentCode
2483396
Title
200 μA-threshold quantum wire lasers
Author
Tiwari, Sandip
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
627
Lastpage
628
Abstract
A number of attributes predicted for quantum wire lasers have been demonstrated using GaAs wells on periodically corrugated substrates. Here, We report ultra-low threshold currents and other operational characteristics of strained multi-well quantum-wire lasers that employ simple and unique self-alignment during growth
Keywords
III-V semiconductors; diffraction gratings; gallium arsenide; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; semiconductor quantum wires; substrates; 200 muA; GaAs; GaAs wells; operational characteristics; periodically corrugated substrates; quantum wire lasers; self-alignment; strained multi-well quantum-wire lasers; ultra-low threshold currents; Bandwidth; Gallium arsenide; Indium phosphide; Optical pulses; Power generation; Quantum well lasers; Substrates; Tensile strain; Threshold current; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379345
Filename
379345
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