DocumentCode
2483711
Title
Epitaxial liftoff of GaAs detectors onto silicon integrated circuits
Author
Jokerst, Nan Marie
Author_Institution
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
664
Lastpage
665
Abstract
The seperation of thin film epitaxial devices from the growth substrated is called epitaxial lift off, and the subsequent transfer and bonding of these thin film devices to smooth substrates such as Si integrated circuits is studied
Keywords
III-V semiconductors; epitaxial growth; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical fabrication; photodetectors; semiconductor growth; thin film circuits; thin film devices; GaAs; GaAs detectors; Si; Si integrated circuits; bonding; epitaxial lift off; silicon integrated circuits; smooth substrates; thin film devices; thin film epitaxial devices; Bonding; Costs; Detectors; Gallium arsenide; Integrated circuit interconnections; Semiconductor thin films; Silicon; Substrates; Thin film circuits; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379364
Filename
379364
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