Investigation of charge carrier dynamics in silicon wafers using terahertz imaging spectroscopy

Terahertz time-domain spectroscopy can be used to characterize silicon solar cell properties such as: conductivity, charge carrier mobility and density. Moreover, THz spectroscopy and imaging can be used for defect analysis in semiconductor and photovoltaic materials. This paper describes the investigation of optically injected charge carrier dynamics by the use of THz spectroscopy. THz-pump/THz-probe measurements were carried out at different measurement positions on silicon wafers which were illuminated by a metal-halid light source. Results indicate that THz time-domain spectroscopy is a promising technique for the characterization of silicon wafers for photovoltaic industry.