Progress in high power diode arrays

Author

Scifres, D. ; Endriz, J. ; Mundinger, D. ; Haden, J. ; Welch, D. ; Mehuys, D. ; Sakamoto, M. ; Lang, R. ; Craig, R. ; Harnagel, G.

Author_Institution

SDL Inc., San Jose, CA, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

719

Lastpage

721

Abstract

Recent progress in high power diode arrays include higher power output levels (>100 W/cm), higher efficiency (>50%), longer lifetimes (10¹¹ shots QCW, 10000 hrs CW), high temperature operation (>70°C), and expanded wavelength coverage (670 nm to 2.0 μm). In addition to advances in device performance, new package designs have been developed which provide for higher average power capability and optical systems have been developed to reformat the output in ways that are more convenient for many practical applications

Keywords

life testing; optical pumping; optical testing; semiconductor device testing; semiconductor laser arrays; semiconductor lasers; 10000 h; 50 percent; 670 nm to 2 mum; 70 C; device performance; expanded wavelength coverage; high power diode arrays; high temperature operation; higher average power capability; higher efficiency; higher power output levels; longer lifetimes; optical systems; package designs; practical applications; Bars; Diodes; Laser excitation; Lenses; Microoptics; Optical design; Optical pumping; Packaging; Solid lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379392

Filename

379392