DocumentCode
2484683
Title
Vacuum ultraviolet laser ablation of insulators and III-V semiconductors
Author
Herman, Peter R. ; Beckley, Keith ; Moore, J. David ; Potyrailo, Radislav A.
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fYear
1993
fDate
15-18 Nov 1993
Firstpage
764
Lastpage
765
Abstract
Current excimer-laser processing techniques can be extended to a broader and more diverse range of materials by moving to the vacuum ultraviolet (VUV; 100-200 nm) spectral region. Most materials are highly opaque in the VUV and the harder photon energy readily breaks chemical bonds, minimizing thermal loading at target surfaces. Further, the short-wavelength radiation affords patterning of sub quarter-micron feature sizes. An experimental survey has been undertaken to evaluate laser etch rates and surface quality produced on several polymer, glass, and semiconductor materials by both ArF and F2 excimer lasers, with the hope of defining new processing applications. A summary of this investigation is presented in this paper
Keywords
III-V semiconductors; insulators; laser ablation; laser beam etching; 100 to 200 nm; ArF; ArF laser; F2; F2 excimer lasers; III-V semiconductors; chemical bonds; excimer-laser processing techniques; insulators; laser etch rates; processing applications; short-wavelength radiation; sub quarter-micron feature sizes; surface quality; thermal loading; vacuum ultraviolet laser ablation; vacuum ultraviolet spectral region; Chemical lasers; Etching; III-V semiconductor materials; Insulation; Laser ablation; Optical materials; Semiconductor lasers; Surface emitting lasers; Thermal loading; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379416
Filename
379416
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