Comparison of calculation techniques ofconstant VSWR impedance circle: evaluation of power transistors robustness

Author

Blanchet, Floria ; Pache, Denis ; Bousbia, Hind ; Barataud, Denis ; Nebus, Jean-Michel

Author_Institution

Central CAD, STMicroelectron., Crolles

fYear

0

fDate

0-0 0

Firstpage

45

Lastpage

48

Abstract

This paper determines the locus of points of constant output voltage standing wave ratio (VSWR) around the load optimal impedance at the fundamental frequency. The proposed resolution has no hypothesis and there is a solution for whatever impedance. This resolution is very helpful to determine the power transistors robustness. Some measurements results are presented on a Si/SiGe HBT of STMicroelectronics technology. The measurements are realized on two multi-harmonic load-pull test-benches: one passive and one active

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power bipolar transistors; silicon; Si-SiGe; constant VSWR impedance circle; constant output voltage standing wave ratio; heterojunction bipolar transistors; load optimal impedance; multiharmonic load-pull test-benches; power transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Power transistors; Reflection; Robustness; Silicon germanium; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics 2006, Ph. D.

Conference_Location

Otranto

Print_ISBN

1-4244-0157-7

Type

conf

DOI

10.1109/RME.2006.1689892

Filename

1689892