Verification of an improved BSIM3v3 MOSFET model

Author

Toner, B. ; Fusco, Vincent F. ; Alam, M.S. ; Armstrong, G.A.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK

fYear

2000

fDate

2000

Firstpage

96

Lastpage

101

Abstract

In this paper the BSIM3v3 MOSFET model has been adapted for use at S-band frequencies. Three components have been added to the model to account for extrinsic physical effects. Justification for these components is given and full verification of the model has been completed through DC, S-parameter, power and noise measurement. Excellent agreement has been found between measured and simulated results, with the resulting model providing a good representation of a 0.25 μm CMOS device in the linear region of operation

Keywords

MOSFET; S-parameters; UHF field effect transistors; UHF measurement; electric noise measurement; equivalent circuits; power measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; 0.25 micron; 1 to 4 GHz; BSIM3v3 MOSFET model; CMOS device; DC measurement; MOSFET model improvement; S-band frequencies; S-parameter measurement; linear operation region; model verification; noise measurement; parameter extraction; power measurement; Capacitance; Contact resistance; Costs; Immune system; MOSFET circuits; Measurement standards; Radio frequency; Resistors; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

High Frequency Postgraduate Student Colloquium, 2000

Conference_Location

Dublin

Print_ISBN

0-7803-6590-9

Type

conf

DOI

10.1109/HFPSC.2000.874089

Filename

874089