A monolithic 2.4 GHz, 0.13 μm CMOS power amplifier with 28 dBm output power and 48% PAE at 1.2 V supply

Author

Vasylyev, Andriy ; Weger, P. ; Bakalski, W. ; Thuringer, R. ; Simburger, W.

Author_Institution

Brandenburg Univ. of Technol., Cottbus, Germany

fYear

2004

fDate

13-17 Sept. 2004

Firstpage

98

Lastpage

99

Abstract

A two stage differential (push-pull) Class AB power amplifier for 2.4 GHz has been realized in a 0.13 μm standard CMOS technology. A microstrip line matching network was used for the impedance transformation. A maximum output power of 28 dBm was achieved at 1.2 V supply voltage and 48% power added efficiency. The small signal gain is 26 dB.

Keywords

CMOS analogue integrated circuits; UHF circuits; UHF power amplifiers; differential amplifiers; electric impedance; impedance matching; integrated circuit design; microstrip circuits; monolithic integrated circuits; 0.13 micron; 1.2 V; 2.4 GHz; 26 dB; CMOS amplifier; Class AB amplifier; circuit design; differential amplifier; impedance transformation; microstrip line matching network; monolithic power amplifier; power added efficiency; push-pull amplifier; CMOS technology; Capacitors; Driver circuits; Impedance matching; Microstrip; Power amplifiers; Power generation; Power supplies; Solid modeling; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on

Print_ISBN

966-7968-69-3

Type

conf

DOI

10.1109/CRMICO.2004.183117

Filename

1390099