DocumentCode
2493518
Title
Linearity measurements of Si/SiGe Heterojunction Bipolar Transistor using a Large Signal Network Analyzer with an harmonic Load-Pull setup
Author
Blanchet, F. ; Pache, D. ; Giry, A. ; El Yaagoubi, M. ; Barataud, D. ; Nebus, J.M.
Author_Institution
Central CAD, STMicroelectron.
fYear
0
fDate
0-0 0
Firstpage
477
Lastpage
480
Abstract
This paper presents original multi-harmonic modulated load-pull measurements on a Si/SiGe HBT of STMicroelectronics technology. The original aspect is that the linearity, power and efficiency measurements are realized on an active load-pull test-bench associated with a large signal network analyzer. The aim of the measurements is to optimize and characterize the HBT excited by a CW and a two-tone signal. The comparison with the simulation lets to validate the models in large-signal
Keywords
Ge-Si alloys; heterojunction bipolar transistors; network analysers; semiconductor device measurement; Si-SiGe; harmonic load pull setup; heterojunction bipolar transistor; large signal network analyzer; linearity measurements; load pull measurements; Frequency; Germanium silicon alloys; Harmonic analysis; Heterojunction bipolar transistors; Linearity; Power measurement; Power transistors; Signal analysis; Silicon germanium; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Research in Microelectronics and Electronics 2006, Ph. D.
Conference_Location
Otranto
Print_ISBN
1-4244-0157-7
Type
conf
DOI
10.1109/RME.2006.1689997
Filename
1689997
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