High-speed photodiodes with reduced dark current and enhanced responsivity in the blue/UV spectra

Author

Hohenbild, M. ; Seegebrecht, P. ; Pless, R. ; Einbrodt, W.

Author_Institution

Semicond. Electron., Kaiserstr, Denmark

fYear

2003

fDate

17-18 Nov. 2003

Firstpage

60

Lastpage

65

Abstract

A novel photodiode for the blue/UV spectral range, which is compatible to standard bulk CMOS or BiCMOS technology processes, is presented. The new diode structure is compared to an equivalent diode structure, processed with conventional contact fingers. Quantum efficiencies of 62% and 93.3% were measured for blue (405 nm) and red (638.3 nm) laser light, respectively. A -3 dB bandwidth of over 259 MHz is determined for both wavelengths. The low dark current density of 1.2 nA/cm₂ results in a very good noise performance.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; dark conductivity; equivalent circuits; photodiodes; quantum point contacts; semiconductor device noise; ultraviolet spectra; BiCMOS; CMOS; blue laser light; contact fingers; dark current; enhanced responsivity; equivalent diode structure; high-speed photodiodes; noise performance; quantum efficiencies; red laser light; Bandwidth; BiCMOS integrated circuits; CMOS process; CMOS technology; Dark current; Diodes; Fingers; Laser noise; Photodiodes; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on

Print_ISBN

0-7803-7904-7

Type

conf

DOI

10.1109/EDMO.2003.1259978

Filename

1259978