Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors

Author

Anteney, I.M. ; Lippert, G. ; Ashburn, P. ; Osten, H.J. ; Heinemann, B. ; Parker, G.J.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

55

Lastpage

60

Abstract

A novel electrical method is described which allows the extraction of bandgap narrowing within the base of SiGe heterojunction bipolar transistors due to heavy doping effects and the presence of germanium. In addition it is shown that the method´s sensitivity to doping tails makes it ideal for determining the presence of parasitic energy barriers due to B outdiffusion from the base, a cause of major concern for HBT technology. The analysis is applied to SiGe and SiGeC HBTs showing that background carbon incorporation (≈10²⁰ m^-3) completely suppresses TED

Keywords

Ge-Si alloys; diffusion; energy gap; heavily doped semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device reliability; semiconductor materials; B outdiffusion; Gummel plots; HBT reliability; SiGe; SiGe HBTs; SiGeC; SiGeC HBTs; TED suppression; background C incorporation; bandgap narrowing; doping tails; electrical determination; heavy doping effects; parasitic energy barriers; Boron; Energy barrier; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668507

Filename

668507