Monolithically integrated In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM-HEMT receiver grown by OMCVD on patterned InP substrates

Author

Hong, W.P. ; Chang, G.-K. ; Bhat, R. ; Gimlett, J.L. ; Nguyen, C.K. ; Sasaki, G. ; Koza, M.

Author_Institution

Bellcore, Red Bank, NJ, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

733

Lastpage

736

Abstract

A long-wavelength receiver OEIC (optoelectronic integrated circuit) comprising an InAlAs-InGaAs MSM (metal-semiconductor-metal) detector and a InAlAs-InGaAs HEMT (high-electron mobility transistor) high-impedance preamplifier has been demonstrated. The layer structure was grown by LP-OMCVD (low-pressure organometallic chemical vapor deposition) on patterned InP substrates, which allowed independent optimization of the MSM detector and the HEMT preamplifier. The MSM detector showed the lowest leakage current (1 nA) ever reported with a 0.42 A/W responsivity, and the HEMT exhibited an external transconductance of 260 mS/mm. The bandwidth of the MSM-HEMT receiver was about 2 GHz. An excellent receiver response to 1.7 Gb/s NRZ random input signals has been obtained. The results reported strongly suggest that MSM-HEMT receivers have great potential for high-bit-rate optical-fiber communication systems.<>

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; substrates; 1 nA; 1.7 Gbit/s; 2 GHz; HEMT; HEMT preamplifier; InAlAs-InGaAs; InP substrates; MSM; MSM detector; MSM-HEMT receivers; OEIC; OMCVD; bandwidth; high-bit-rate optical-fiber communication systems; high-electron mobility transistor; high-impedance preamplifier; independent optimization; leakage current; long-wavelength receiver; metal-semiconductor-metal; optoelectronic integrated circuit; organometallic chemical vapor deposition; responsivity; transconductance; Chemical vapor deposition; Detectors; HEMTs; Indium phosphide; Leak detection; Leakage current; MODFETs; Optical receivers; Optoelectronic devices; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74159

Filename

74159