DocumentCode
2496782
Title
Recent advances in GaN HEMT development
Author
Schwierz, F. ; Ambacher, Oliver
Author_Institution
Inst. fur Festkorperelektronik, Technische Univ. Ilmenau, Germany
fYear
2003
fDate
17-18 Nov. 2003
Firstpage
204
Lastpage
209
Abstract
GaN HEMTs show great potential for RF applications. This paper provides an overview on the current status of GaN HEMT technology. It discusses the relevant properties of the AlGaN/GaN material system. Describes the evolution of GaN HEMTs during the last 10 years, and highlights the state of the art performance of these transistors. A comparison with competing HEMT type is made and the prospects of commercial GaN HEMTs are discussed.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; radiofrequency integrated circuits; AlGaN; HEMT technology; RF applications; high electron mobility transistors; Aluminum gallium nitride; Conducting materials; Cutoff frequency; Electrons; Gallium nitride; HEMTs; Heterojunctions; Piezoelectric polarization; Radio frequency; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN
0-7803-7904-7
Type
conf
DOI
10.1109/EDMO.2003.1260049
Filename
1260049
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