Integrated current sensing device for micro IDDQ test

Author

Nose, Kouichi ; Sakurai, Takayasu

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1998

fDate

2-4 Dec 1998

Firstpage

323

Lastpage

326

Abstract

A current sensing device, namely a Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI device with the conventional CMOS process. The HEMOS is also helpful in establishing the low standby current by identifying the locations of large standby power consumption (possibly a design fault) using only a few pads

Keywords

CMOS digital integrated circuits; Hall effect transducers; MOSFET; VLSI; electric current measurement; electric sensing devices; integrated circuit testing; CMOS process; Hall effect MOSFET; VLSI; integrated current sensing device; internal circuit blocks; low standby current; micro IDDQ test; noncontact current measurement; nondisturbing current measurement; standby power consumption; CMOS process; Circuit faults; Circuit testing; Current measurement; Energy consumption; Fault diagnosis; Hall effect; MOSFET circuits; Manufacturing processes; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Symposium, 1998. ATS '98. Proceedings. Seventh Asian

ISSN

1081-7735

Print_ISBN

0-8186-8277-9

Type

conf

DOI

10.1109/ATS.1998.741633

Filename

741633