MOVPE of strained InGaAsP/InGaAsP MQW structures for laser applications

Author

Wiedemann, P. ; Klenk, M. ; Laube, G. ; Weinmann, R. ; Zielinski, E.

Author_Institution

Alcatel SEL AG, Stuttgart, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

545

Lastpage

548

Abstract

The authors present basic studies about the properties of compressively strained multi-quantum well (MQW) structures and their optimization for laser applications. Epitaxial growth of strained InGaAsP/InGaAsP MQW structures was performed in standard low pressure metal organic vapor phase epitaxial equipment. High resolution diffractometry measurements showed excellent agreement with simulations. Secondary ion mass spectrometry measurements showed good well to well homogeneity. By optimizing growth pauses and strain a best threshold current density was achieved

Keywords

III-V semiconductors; compressibility; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; secondary ion mass spectra; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP; compressively strained multi-quantum well; diffractometry; laser applications; metal organic vapor phase epitaxial equipment; secondary ion mass spectrometry; threshold current density; Epitaxial growth; Epitaxial layers; Inductors; Laser applications; Lattices; Quantum well devices; Satellites; Temperature; Threshold current; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380563

Filename

380563