Etching of InP with SiCl4 for smooth surfaces and vertical sidewalls at temperatures between 200°C and 300°C in a modified magnetron ion etching system

The temperature dependence of etching InP with SiCl₄ was investigated in detail in a magnetron ion etching system MRC MIE 710. Above 100°C the etch rate and the sidewall angle increase with increasing temperature until a flow-dependent saturation value of the etch rate and vertical sidewalls were obtained at a flow-dependent temperature between 200°C and 300°C. An electrical heating system was built into the specimen holder which was used also to transport the samples between loadlock and main chamber. The construction tolerates temperatures up to 300°C, and proved to withstand a chlorine plasma