Investigation, research and manufacture of SOI structures to produce integrated circuits and different devices of microelectronics

Author

Timoshenkov, S.P. ; Dyagilev, V.V. ; Kalugin, V.V. ; Prokop´ev, E.P. ; Grafutin, V.I.

Author_Institution

Moscow Inst. of Electron. Technol., Russia

fYear

2004

fDate

13-17 Sept. 2004

Firstpage

545

Lastpage

546

Abstract

In the future special microelectronics solutions will allow the developing of separate segments of commercial electronics on the world level. As a result of research the manufacturing route is developed and samples of SOI structures are obtained by the method of bonding and gas splitting. Silicon wafer surfaces and instrument layers obtained by methods of bonding are investigated. The results of sample characteristics research allow the availability of the chosen technological process of the wafer clearing process in manufacturing of SOI structures and expediency of similar manufacture at microelectronics enterprises.

Keywords

integrated circuit manufacture; silicon-on-insulator; wafer bonding; SOI structure manufacture; bonding; gas splitting; instrument layers; integrated circuits; microelectronics; silicon wafer surfaces; wafer clearing process; Glass; IEEE catalog; Integrated circuit manufacture; Integrated circuit technology; Microelectronics; Physics; Region 8; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on

Print_ISBN

966-7968-69-3

Type

conf

DOI

10.1109/CRMICO.2004.183327

Filename

1390309