Noise and current characterization of lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays

Author

Pogany, D. ; Ababou, S. ; Guillot, G.

Author_Institution

URA CNRS, INSA-Lyon, Villeurbanne, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

611

Lastpage

614

Abstract

A systematical study of physical mechanisms which control both the low frequency noise (LFN) and current in good and failed lattice-mismatched InP/In_xGa_1-xAs/InP photodetectors has been performed. It has been shown that the LFN in lattice-mismatched InP/InGaAs/InP photodetectors results from the fluctuation of the excess leakage current which flows through localized leakage sites at the p-n junction. Results are analyzed in terms of influence of both material and technological defects. A hypothesis about the bulk or surface origin of the LFN is discussed in detail

Keywords

III-V semiconductors; arrays; current fluctuations; gallium arsenide; indium compounds; leakage currents; photodetectors; semiconductor device noise; InP-InGaAs-InP; current characterization; excess leakage current; lattice-mismatched LP-MOCVD grown InP/InGaAs/InP photodetector arrays; localized leakage sites; low frequency noise; material defects; p-n junction; physical mechanisms; technological defects; Background noise; Current measurement; Diodes; Fluctuations; Indium gallium arsenide; Indium phosphide; Leakage current; Noise generators; Photodetectors; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380621

Filename

380621