MeV energy ion implantation and its device applications in InP

Author

Nadella, Ravi K. ; Vellanki, Jayadev ; Rao, Mulpuri V.

Author_Institution

George Mason Univ., Fairfax, VA, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

353

Lastpage

356

Abstract

MeV energy Si, S, Be, B, Fe, and Co implantations were performed in the energy range 0.4-20 MeV to obtain buried/thick n- or p- or high-resistance layers in InP. The first four range statistics have been established for these dopants in this energy range. Optimum annealing conditions have been established. Electron concentrations as high as 2 × 10¹⁸ cm^-3 have been obtained. B, Fe, and Co implantations gave high resistivity layers. The usefulness of MeV implantation was demonstrated in the fabrication of vertical positive-intrinsic-negative (PIN) and varactor diodes

Keywords

III-V semiconductors; annealing; buried layers; electron density; indium compounds; ion implantation; p-i-n diodes; semiconductor doping; varactors; 0.4 to 20 MeV; InP:B; InP:Be; InP:Co; InP:Fe; InP:S; InP:Si; PIN diodes; annealing; buried layers; electron concentration; high-resistance layers; ion implantation; semiconductor; varactor diodes; Annealing; Conductivity; Diodes; Electrons; Fabrication; Indium phosphide; Ion implantation; Iron; Statistics; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380637

Filename

380637