MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 μm lasers

Author

Yamamoto, Mitsuo ; Yamamoto, Nono ; Nakano, Junichi

Author_Institution

NTT Opto-electron. Labs., Atsugi-shi, Kanagawa, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

231

Lastpage

234

Abstract

The authors report strained InAsP quantum-well structures emitting at 1.3 μm that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm² were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-μm wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; waveguide lasers; 1.3 micron; InAsP-InGaAsP; MOVPE growth; laser diode; long wavelength optical device applications; low threshold 1.3 μm lasers; low-pressure metalorganic; ridge stripe waveguide; semiconductor; strained InAsP/InGaAsP quantum-well structures; vapor phase epitaxy; Diode lasers; Epitaxial growth; Epitaxial layers; Optical devices; Optical materials; Optical waveguides; Quantum well lasers; Quantum wells; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380668

Filename

380668