DocumentCode
2499818
Title
Limits of strain compensation in MQW InGaAsP/InP 1.5 μm lasers
Author
Houghton, D.C. ; Davies, M. ; Dion, M.
Author_Institution
Nat. Res. Council of Canada, Ottawa, Ont., Canada
fYear
1993
fDate
19-22 Apr 1993
Firstpage
187
Lastpage
190
Abstract
The authors consider strain compensation for typical multiple quantum well (MQW) laser structures using an energy balance model and determine the theoretical limitations of structural stability based on uncompensated reliability data from the literature. Strain compensation is the technique used to balance tensile and compressive forces in alternating layers to render the stack strain neutral. Strain compensation must be given careful consideration in the design and synthesis of strain neutral structures. Strain compensation holds the promise of reduced defect densities with enhanced stability and should permit very highly strained QW optoelectronic devices to be fabricated which are predicted to have considerably enhanced performance and reliability
Keywords
III-V semiconductors; compressibility; deformation; gallium arsenide; indium compounds; quantum well lasers; 1.5 micron; InGaAsP-InP; compressive forces; defect densities; energy balance model; multiple quantum well laser structures; optoelectronic devices; strain compensation; structural stability; Capacitive sensors; Indium phosphide; Laser modes; Laser stability; Laser theory; Quantum mechanics; Quantum well devices; Quantum well lasers; Structural engineering; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380678
Filename
380678
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