• DocumentCode
    2499818
  • Title

    Limits of strain compensation in MQW InGaAsP/InP 1.5 μm lasers

  • Author

    Houghton, D.C. ; Davies, M. ; Dion, M.

  • Author_Institution
    Nat. Res. Council of Canada, Ottawa, Ont., Canada
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    The authors consider strain compensation for typical multiple quantum well (MQW) laser structures using an energy balance model and determine the theoretical limitations of structural stability based on uncompensated reliability data from the literature. Strain compensation is the technique used to balance tensile and compressive forces in alternating layers to render the stack strain neutral. Strain compensation must be given careful consideration in the design and synthesis of strain neutral structures. Strain compensation holds the promise of reduced defect densities with enhanced stability and should permit very highly strained QW optoelectronic devices to be fabricated which are predicted to have considerably enhanced performance and reliability
  • Keywords
    III-V semiconductors; compressibility; deformation; gallium arsenide; indium compounds; quantum well lasers; 1.5 micron; InGaAsP-InP; compressive forces; defect densities; energy balance model; multiple quantum well laser structures; optoelectronic devices; strain compensation; structural stability; Capacitive sensors; Indium phosphide; Laser modes; Laser stability; Laser theory; Quantum mechanics; Quantum well devices; Quantum well lasers; Structural engineering; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380678
  • Filename
    380678