Effect of growth condition on electrical properties of MBE and MOCVD-AlInAs

Author

Luo, J.K. ; Thomas, H.

Author_Institution

Coll. of Cardiff, Univ. of Wales, UK

fYear

1993

fDate

19-22 Apr 1993

Firstpage

175

Lastpage

178

Abstract

The characterization of Al_xIn_1-xAs layers grown on n⁺-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition has been carried out by I-V-T, C-V, deep level transient spectroscopy and admittance spectroscopy measurements. Three defect levels E1, E2, and E3 were observed in both material systems and their densities were found to increase rapidly from ~10¹² cm^-3 to ~10¹⁶ cm^-3 as the growth temperature was decreased from 740°C to 500°C. The increased defect density was found to be correlated with the decrease of the barrier height of the Schottky diodes, and the appearance of defect-assisted tunneling current in MBE-diodes. The activation energy of the defect E3 was found to increase with increasing AlAs mole fraction, and likely correlating with the Γ-conduction band of AlInAs materials

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; chemical vapour deposition; conduction bands; deep level transient spectroscopy; electric admittance; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; tunnelling; 740 to 500 degC; AlInAs; C-V measurements; E1 defect; E2 defect; E3 defect; I-V-T measurements; Schottky diodes; admittance spectroscopy; barrier height; conduction band; deep level transient spectroscopy; defect density; defect-assisted tunneling current; metal-organic chemical vapor deposition; molecular beam epitaxy; Admittance measurement; Capacitance measurement; Conducting materials; Insulation; MOCVD; Metal-insulator structures; Molecular beam epitaxial growth; Schottky diodes; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380681

Filename

380681