Admittance spectroscopy measurements on AlInAs/GaInAs/AlInAs quantum well structures: Evidence of a deep level assisted tunneling

Author

Ababou, S. ; Guillot, G. ; Clark, S. ; Halkias, G. ; Georgakilas, A. ; Zekentes, K. ; Stievenard, D. ; Letartre, X. ; Lannoo, M.

Author_Institution

URA CNRS, INSA de Lyon, Villeurbanne, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

151

Lastpage

154

Abstract

The authors report on admittance measurements applied to Al_0.48In_0.52As/Ga_1-xIn_xAs/ Al_0.48In_0.5As single quantum wells grown on InP. Evidence is presented for defect assisted tunneling in these structures. The Ga_1-xIn_xAs well is either lattice matched (x = 0.53) or lattice mismatched (x = 0.60) to Al_0.48In_0.52As. To ensure that the observed conductance peak corresponds to the thermionic emission from the well above the barriers, complementary characterization of the traps lying in AlInAs layers has been performed by means of deep level transient spectroscopy and admittance measurements

Keywords

III-V semiconductors; aluminium compounds; deep level transient spectroscopy; electric admittance; electrical conductivity; gallium arsenide; indium compounds; interface states; semiconductor quantum wells; thermionic emission; tunnelling; Al_0.48In_0.52As-GaInAs-Al_0.48In _0.52As; admittance; conductance; deep level transient spectroscopy; defect assisted tunneling; quantum wells; thermionic emission; Admittance measurement; Capacitance; Capacitance-voltage characteristics; Frequency; Gain measurement; Indium phosphide; Lattices; Spectroscopy; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380687

Filename

380687