DocumentCode
2500114
Title
Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 μm GaInAs/InP PiN photodiodes
Author
di Forte-Poisson, M.A. ; Brylinski, C. ; Herbeaux, C. ; Androussi, Y. ; Lefebvre, A. ; Persio, J. Di ; Vassilakis, E. ; Herrbach, F. ; Carriére, C.
Author_Institution
Thomson-CSF, Orsay, France
fYear
1993
fDate
19-22 Apr 1993
Firstpage
131
Lastpage
134
Abstract
The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed
Keywords
III-V semiconductors; chemical vapour deposition; crystal defects; gallium arsenide; indium compounds; interface states; interface structure; p-i-n photodiodes; semiconductor growth; semiconductor heterojunctions; surface structure; GaInAs-InP; PiN photodiodes; crystallographic properties; electrical properties; heterostructures; interfacial defects; low pressure-metal-organic chemical vapor deposition; switching sequences; Capacitance-voltage characteristics; Dark current; Degradation; Etching; Gain measurement; Indium phosphide; Metallization; Photodiodes; Silicon alloys; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380692
Filename
380692
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