• DocumentCode
    2500114
  • Title

    Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 μm GaInAs/InP PiN photodiodes

  • Author

    di Forte-Poisson, M.A. ; Brylinski, C. ; Herbeaux, C. ; Androussi, Y. ; Lefebvre, A. ; Persio, J. Di ; Vassilakis, E. ; Herrbach, F. ; Carriére, C.

  • Author_Institution
    Thomson-CSF, Orsay, France
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed
  • Keywords
    III-V semiconductors; chemical vapour deposition; crystal defects; gallium arsenide; indium compounds; interface states; interface structure; p-i-n photodiodes; semiconductor growth; semiconductor heterojunctions; surface structure; GaInAs-InP; PiN photodiodes; crystallographic properties; electrical properties; heterostructures; interfacial defects; low pressure-metal-organic chemical vapor deposition; switching sequences; Capacitance-voltage characteristics; Dark current; Degradation; Etching; Gain measurement; Indium phosphide; Metallization; Photodiodes; Silicon alloys; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380692
  • Filename
    380692