Photodarkening and photoinduced anisotropy in amorphous chalcogenide thin films induced with He-Ne laser

Author

Park, Soo-Ho ; Chun, Jin-Young ; Lee, Hyun-Yong ; Chung, Hong-Bay

Author_Institution

Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul, South Korea

fYear

1998

fDate

27-30 Sep 1998

Firstpage

519

Lastpage

522

Abstract

Photoinduced dichroism in As₄₀Ge₁₀Se₁₅S₃₅ thin films induced with illumination of 1.96 eV light has been studied. Photodarkening has been also investigated. The photoinduced anisotropy sustains a metastable state after cessation of illumination, while it can be erased with illumination of unpolarized light or annealing at 62°C. The kinetics of saturated dichroism (D _sat) was satisfied with Gaussian approximation according to the temperature changes

Keywords

annealing; arsenic compounds; chalcogenide glasses; dichroism; germanium compounds; metastable states; photochromism; semiconductor thin films; 1.96 eV; 62 C; As₄₀Ge₁₀Se₁₅S₃₅; Gaussian approximation; He-Ne laser illumination; amorphous chalcogenide thin film; annealing; kinetics; metastable state; photodarkening; photoinduced anisotropy; photoinduced dichroism; Amorphous materials; Anisotropic magnetoresistance; Annealing; Gaussian approximation; Kinetic theory; Lighting; Metastasis; Photochromism; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on

Conference_Location

Toyohashi

Print_ISBN

4-88686-050-8

Type

conf

DOI

10.1109/ISEIM.1998.741795

Filename

741795