Proposal of self-scanning light emitting device (SLED)

Author

Kusuda, Y. ; Tone, K. ; Tanaka, S. ; Yamashita, K. ; Nagata, H. ; Komaba, N.

Author_Institution

Nippon Sheet Glass Co. Ltd., Ibaraki, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

851

Lastpage

854

Abstract

A novel functional optoelectronic device, the self-scanning light-emitting device (SLED), is proposed. The SLED consists of light-emitting thyristors whose turn-on voltages interact with each other, and the light-emitting element is automatically transferred by input clock pulses. GaAs SLED operation was demonstrated using four phase transfer clock pulses, and a maximum transfer rate of 3 MHz was obtained. It is suggested that the SLED is promising for optical computing and optical interconnection technology with high-density integration.<>

Keywords

III-V semiconductors; gallium arsenide; light emitting devices; optoelectronic devices; thyristors; 3 MHz; GaAs; SLED; four phase transfer clock pulses; high-density integration; light-emitting thyristors; maximum transfer rate; operation; optical computing; optical interconnection technology; optoelectronic device; self-scanning light emitting device; semiconductors; thyristor arrays; turn-on voltages interact with each other; Cathodes; Clocks; Optical modulation; Optical pulse generation; Optical pulses; Proposals; Shift registers; Stimulated emission; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74186

Filename

74186