DocumentCode
2502722
Title
Suppression of substrate injection by RESURF LDMOS devices in a smart power technology for 20-30 V applications
Author
Zhu, R. ; Parthasarathy, V. ; Capilla, J. ; Peterson, W. ; Bacchi, M. ; Zunino, M. ; Baird, R.
Author_Institution
Transp. Silicon Technol. Center, Motorola Inc., Mesa, AZ, USA
fYear
1998
fDate
27-29 Sep 1998
Firstpage
184
Lastpage
186
Abstract
Suppression of substrate injection has been achieved by integration of a RESURF LDMOS device in a 20-30 V smart power technology. A successful use of the single n-implant for both depletion mode NMOS and RESURF LDMOS results in a dramatic increase in performance and functionality of this technology with virtually no extra process complexity
Keywords
BiCMOS analogue integrated circuits; integrated circuit technology; power integrated circuits; 20 to 30 V; RESURF LDMOS devices; analog BiCMOS process flow; depletion mode NMOS; single n-implant; smart power technology; substrate injection suppression; Application software; BiCMOS integrated circuits; CMOS technology; Diodes; Implants; Low voltage; MOS devices; Rectifiers; Substrates; Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741920
Filename
741920
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