DocumentCode
2502892
Title
Formation of atomically sharp silicon needles (for vacuum microelectronics)
Author
Marcus, R.B. ; Ravi, T.S. ; Gmitter, T. ; Chin, K. ; Liu, D. ; Orvis, W.J. ; Ciarlo, D.R. ; Hunt, C.E. ; Trujillo, J.
Author_Institution
Bellcore, Red Bank, NJ, USA
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
884
Lastpage
886
Abstract
Summary form only given. An effort was made to exploit a known oxidation inhibition of silicon at regions of high curvature in order to develop emitter tips significantly sharper than those obtained previously. While this idea has already been proposed and used, the present study is the first to examine oxidation of conical silicon tips in some detail at high resolution. The results of this study are the development of a method for preparing uniform silicon tips with tip radii less than 1.0 nm and the clear demonstration of oxidation inhibition at a region of high and complex curvature. TEM images of two tips are shown at different magnifications. Fringes of the Si
Keywords
electron field emission; elemental semiconductors; oxidation; silicon; vacuum microelectronics; Si; TEM images; complex curvature; conical silicon tips; electron scattering; emitter tips; oxidation inhibition; tip diameter; tip radii; Atomic measurements; Electron emission; Electron guns; Microelectronics; Needles; Oxidation; Physics; Silicon; Springs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74195
Filename
74195
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