Characterization of a-Si:H:F thin films and devices

Difluorosilane was used as a precursor in a plasma-enhanced chemical vapor deposition process for preparing intrinsic, P- and B-doped a-Si:H,F material on glass and Mo-coated substrates. Dark conductivity, photoconductivity, and optical absorption were measured to characterize the material. Devices were made by evaporating Au, Ag, and Al electrodes in sandwich configuration. From the temperature dependence of the device J-V characteristics, Richardson constant and the Schottky barrier height for intrinsic and for lightly doped material could be determined for the three metals on this amorphous semiconductor. At high forward and reverse bias, square root (Schottky effect) and power law (SCLC) J-V characteristics were observed.