DocumentCode
2504216
Title
Metal diffusion and surface pattern formation on GaAs and As2S3 semiconductors
Author
Iván, István ; Szabó, István ; Mojzes, Imre ; Kökényesi, Sándor ; Nemcsics, Ákos ; Suszter, Miklós ; Misák, Sándor
Author_Institution
Dept. of Exp. Phys., Debrecen Univ., Hungary
fYear
2003
fDate
8-11 May 2003
Firstpage
71
Lastpage
73
Abstract
The possible changes of composition, phase transformations at the surface were investigated in GaAs samples, covered with 50 nm thick Au layer and annealed at different temperatures. Diffusion processes at metal-semiconductor interface determine the surface pattern formation, which has fractal structure. Comparison was made with interdiffusion processes in Au-amorphous As2S3 and Bi-As2S3 structures, which were found as useful for micro and macroscopic surface relief formation, optical recording due to the additional photo-stimulated diffusion.
Keywords
III-V semiconductors; annealing; arsenic compounds; bismuth; chalcogenide glasses; chemical interdiffusion; gallium arsenide; gold; semiconductor-metal boundaries; surface diffusion; surface phase transformations; 50 nm; As2S3; Au; Bi-As2S3; GaAs; amorphous structures; diffusion process; fractal structure; interdiffusion process; macroscopic surface relief formation; metal diffusion; metal-semiconductor interface; microscopic surface relief formation; optical recording; photo-stimulated diffusion; surface pattern formation; surface phase transformations; Annealing; Crystallization; Gallium arsenide; Gold; Indium phosphide; Materials science and technology; Pattern formation; Physics; Scanning electron microscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology: Integrated Management of Electronic Materials Production, 2003. 26th International Spring Seminar on
Print_ISBN
0-7803-8002-9
Type
conf
DOI
10.1109/ISSE.2003.1260486
Filename
1260486
Link To Document