• DocumentCode
    2504662
  • Title

    Electron-hole collisions in concentrator solar cells

  • Author

    Kane, D.E. ; Swanson, R.M.

  • Author_Institution
    Stanford Electron. Lab., CA, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    512
  • Abstract
    Point-contact solar cells are fabricated on high-resistivity silicon and consequently operate in high-level injection where both electrons and holes exist in large numbers. The authors analyze the effects of electron-hole collisions on device operation and conclude that the conventional treatments are theoretically inadequate. The reason for this is that the efficacy of electron-hole collisions in altering the current flow depends on the relative drift velocities of the two carrier, and not merely on their numbers, as is conventionally assumed. From thermodynamic considerations, the authors introduce the more general equations of current flow and consider their effect in practical solar cells. The differences between the proposed general theory and the conventional treatment are described, and both are compared to experimental data where available. A practical modeling method and the application of the general equations to the point-contact solar cell are discussed. It is shown that reductions in mobility due to electron-hole collisions should not have a significant impact on the ultimate energy conversions efficiencies obtainable.
  • Keywords
    carrier mobility; electron-hole recombination; silicon; solar cells; solar energy concentrators; carrier mobility; concentrator Si solar cells; electron-hole collisions; point-contact solar cell; relative drift velocities; semiconductor; Charge carrier processes; Electrical resistance measurement; Electron mobility; Energy conversion; Equations; Laboratories; P-i-n diodes; Photovoltaic cells; Semiconductor device modeling; Silicon; Thermodynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105754
  • Filename
    105754