DocumentCode
2504662
Title
Electron-hole collisions in concentrator solar cells
Author
Kane, D.E. ; Swanson, R.M.
Author_Institution
Stanford Electron. Lab., CA, USA
fYear
1988
fDate
1988
Firstpage
512
Abstract
Point-contact solar cells are fabricated on high-resistivity silicon and consequently operate in high-level injection where both electrons and holes exist in large numbers. The authors analyze the effects of electron-hole collisions on device operation and conclude that the conventional treatments are theoretically inadequate. The reason for this is that the efficacy of electron-hole collisions in altering the current flow depends on the relative drift velocities of the two carrier, and not merely on their numbers, as is conventionally assumed. From thermodynamic considerations, the authors introduce the more general equations of current flow and consider their effect in practical solar cells. The differences between the proposed general theory and the conventional treatment are described, and both are compared to experimental data where available. A practical modeling method and the application of the general equations to the point-contact solar cell are discussed. It is shown that reductions in mobility due to electron-hole collisions should not have a significant impact on the ultimate energy conversions efficiencies obtainable.
Keywords
carrier mobility; electron-hole recombination; silicon; solar cells; solar energy concentrators; carrier mobility; concentrator Si solar cells; electron-hole collisions; point-contact solar cell; relative drift velocities; semiconductor; Charge carrier processes; Electrical resistance measurement; Electron mobility; Energy conversion; Equations; Laboratories; P-i-n diodes; Photovoltaic cells; Semiconductor device modeling; Silicon; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105754
Filename
105754
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