Front and back surface fields for point-contact solar cells

Author

King, R.R. ; Sinton, R.A. ; Swanson, R.M.

Author_Institution

Stanford Univ., CA, USA

fYear

1988

fDate

1988

Firstpage

538

Abstract

The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm²). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, J_o, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized

Keywords

electron-hole recombination; elemental semiconductors; phosphorus; silicon; solar cells; 0.706 V; 22.3 percent; 25 degC; Si:P solar cells; emitter saturation current density; noncurrent collecting diffusions; open-circuit voltage; planar dopant diffusions; point-contact solar cells; semiconductor; sunward surface; surface recombination; Circuits; Conductivity; Current density; Current measurement; Density measurement; Furnaces; Photovoltaic cells; Silicon; Sun; Surface resistance; Surface texture; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105760

Filename

105760