Nickel silicide formation on Si(110) substrate

Author

Guo, Xiao ; Wang, Xiao-Rong ; Jiang, Yu-Long ; Ru, Guo-Ping ; Li, Bing-Zong

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

4

Abstract

Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical characteristics evaluation. The formation kinetics for nickel silicidation on Si(110) substrates was also discussed in this paper.

Keywords

Schottky barriers; X-ray diffraction; annealing; atomic force microscopy; elemental semiconductors; nickel alloys; semiconductor-metal boundaries; silicon; silicon alloys; AFM; NiSi-Si; Schottky contacts; Si; Si(110) substrate; X-ray diffraction; XRD; annealing temperature; atomic force microscopy; electrical property evaluation; formation kinetics; nickel silicide formation; Annealing; Atomic force microscopy; Electric variables; Kinetic theory; Nickel; Schottky barriers; Silicidation; Silicides; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5474895

Filename

5474895